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(2:1) x 2 Channel Analog CMOS Switch, 85 Ohms

Model: ADG636

  • 1 pC charge injection
  • ±2.7 V to ±5.5 V dual-supply operation
  • +2.7 V to +5.5 V single-supply operation
  • Automotive temperature range: -40°C to +125°C
  • 100 pA maximum at 25°C leakage currents
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The ADG636 is a monolithic device, comprising two indepen-dently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions.

This switch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. In addition, it offers on resistance of 85 O typical, which is matched to within 2 O between channels. The ADG636 also has low power dissipation yet is capable of high switching speeds.

  • 1 pC charge injection
  • ±2.7 V to ±5.5 V dual-supply operation
  • +2.7 V to +5.5 V single-supply operation
  • Automotive temperature range: -40°C to +125°C
  • 100 pA maximum at 25°C leakage currents
  • 85 O on resistance
  • Rail-to-rail switching operation
  • Fast switching times
  • 16-lead TSSOP and SOIC packages
  • Typical power consumption: <0.1 µW
  • TTL-/CMOS-compatible inputs
 
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